creat by art - ideal for printed circuit board - high case dielectric strength - high surge current capability - ul recognized file # e-326243 - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test v rrm 50 100 200 400 600 800 v v rms 35 70 140 280 420 560 v v dc 50 100 200 400 600 800 v i f(av) a i 2 ta 2 s t j o c t stg o c document number: ds_d1408052 version: i14 polarity: as marked weight: 2 g (approximately) d2sb05 thru d2sb80 taiwan semiconductor glass passivated sin g le-phase brid g e rectifier features maximum ratings and electrical characteristics (t a =25 o c unless otherwise noted) - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec gbl mechanical data case: gbl parameter symbol d2sb 05 d2sb 10 d2sb 20 d2sb 40 d2sb 60 d2sb 80 v i fsm 80 a unit maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 2 maximum reverse current @ rated vr t j =25 o c t j =125 o c i r 10 a 500 rating of fusing ( t<8.3ms) 26 maximum instantaneous forward voltage (note 1) i f = 2 a v f 1.1 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s, 1% duty cycle peak forward surge current, 8.3 ms single half sine- wave superimposed on rated load typical thermal resistance r jl r ja 10 47 o c/w operating junction temperature range - 55 to +150
part no. part no. d2sb80 d2sb80 (ta=25 o c unless otherwise noted) document number: ds_d1408052 version: i14 preferred p/n packing code green compound code note 1: "xx" defines voltage from 50v (d2sb05) to 800v (d2sb80) d2sbxx (note 1) c2 suffix "g" gbl x0 25 / tube description gbl d2 gbl example 25 / tube 25 / tube / forming d2sb05 thru d2sb80 taiwan semiconductor packing code green compound code package packing ordering information ratings and characteristics curves d2sb80 c2 c2 d2sb80 c2g c2 g green compound 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 average forward a current (a) ambient temperature ( o c) fig.1 maximum forward current derating curve 20 30 40 50 60 70 80 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 2 typical reverse characteristics t j =25 o c t j =125 o c 0.1 1 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics pulse width-300 s 1% duty cycle
min max min max a 19.70 20.30 0.776 0.799 b 2.30 2.70 0.091 0.106 c 1.30 2.00 0.051 0.079 d 0.90 1.10 0.035 0.043 e 4.80 5.20 0.189 0.205 f 10.70 11.30 0.421 0.445 g 2.30 2.70 0.091 0.106 h 13.00 14.00 0.512 0.551 i 3.30 3.70 0.130 0.146 j 0.80 1.20 0.031 0.047 k 0.40 0.60 0.016 0.024 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1408052 version: i14 marking diagram d2sb05 thru d2sb80 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) gbl 0 100 200 300 400 500 600 0.1 1 10 100 1000 junction capacitance (pf) reverse voltage(v) fig. 5 typical junction capacitance f=1.0mhz vslg=50mvp-p
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